Tapered Nanowire Structure With Reduced Off Current

ABSTRACT

Non-planar semiconductor devices including at least one semiconductor nanowire having a tapered profile which widens from the source side of the device towards the drain side of the device are provided which have reduced gate to drain coupling and therefore reduced gate induced drain tunneling currents.

BACKGROUND

The present disclosure relates to semiconductor devices and methods offabricating the same. More particularly, the present disclosure relatesto semiconductor nanowire field effect transistors and methods offabricating the same.

Non-planar semiconductor devices such as FinFETs, trigates and gate-allaround semiconductor nanowire field effect transistors are receivingconsiderable attention for possible use in extending conventionalcomplementary metal oxide semiconductor (CMOS) scaling. One potentialproblem area for deeply scaled devices is band to band tunneling (i.e.,gate induced drain tunneling or “GIDL” for short) which may limit howlow an off current is obtainable for a given device. Low powertechnologies are particularly impacted by this, as the net off currentfrom the sum of all devices on a chip contributes strongly to overallpower consumption.

SUMMARY

Non-planar semiconductor devices including at least one semiconductornanowire having a tapered profile which widens from the source side ofthe device towards the drain side of the device are provided which havereduced gate to drain coupling and therefore reduced gate induced draintunneling currents. More specifically, non-planar semiconductor devicesare provided having at least one tapered semiconductor nanowire that hasa portion located on a drain side of the gate that is wider relative toanother portion of the at least one semiconductor nanowire that islocated on the source side of the gate.

In one aspect of the present disclosure, a non-planar semiconductordevice is provided having reduced gate to drain coupling and thusreduced gate induced drain tunneling currents. The non-planarsemiconductor device includes at least one tapered semiconductornanowire located atop an insulator layer of a semiconductor-on-insulatorsubstrate. An end segment of the at least one tapered semiconductornanowire is attached to a first semiconductor-on-insulator pad regionand another end segment of the at least one tapered semiconductornanowire is attached to a second semiconductor-on-insulator pad region.The pad regions are both located atop the insulator layer. Thenon-planar structure of the present disclosure further includes a gatelocated on a portion of the at least one tapered semiconductor nanowire,a source region located on a first side of the gate, and a drain regionlocated on a second side of the gate which is opposite the first side ofthe gate. In accordance with the present disclosure, the at least onetapered semiconductor nanowire comprises a first semiconductor nanowireportion having a first width located on the first side of the gate and asecond semiconductor nanowire portion having a second width that islocated on the second side of the gate, wherein the second width isgreater than the first width.

In another aspect of the present disclosure methods of forming anon-planar semiconductor device having reduced gate to drain couplingand thus reduced gate induced drain tunneling currents is provided. Inone embodiment, the method includes forming at least one semiconductornanowire above an insulator layer of a semiconductor-on-insulatorsubstrate, wherein an end segment of the at least one semiconductornanowire is attached to a first semiconductor-on-insulator pad regionand another end segment of the at least one semiconductor nanowire isattached to a second semiconductor-on-insulator pad region. Inaccordance with the present disclosure, the pad regions are both locatedatop the insulator layer. Next, the at least one semiconductor nanowireis formed into at least one tapered semiconductor nanowire including afirst semiconductor nanowire portion having a first width, a secondsemiconductor nanowire portion having a second width and a thirdsemiconductor nanowire portion having a third width, wherein the thirdsemiconductor nanowire portion is located between the first and secondsemiconductor nanowire portions, and wherein the first width is lessthan the third width, and the third width is less than the second width.Next, a gate is formed atop the third semiconductor nanowire portion ofthe at least one tapered semiconductor nanowire. After gate formation,the first semiconductor nanowire portion is located on a first side ofthe gate and the second semiconductor nanowire portion is located on asecond side of the gate that is opposite to the first side. Next, asource region is formed on the first side of the gate and a drain regionis formed of the second side of the gate.

In another embodiment, the method includes forming at least one taperedsemiconductor nanowire above an insulator layer of asemiconductor-on-insulator substrate, wherein an end segment of the atleast one tapered semiconductor nanowire is attached to a firstsemiconductor-on-insulator pad region and another end segment of the atleast one tapered semiconductor nanowire is attached to a secondsemiconductor-on-insulator pad region. In accordance with the presentdisclosure, the pad regions are both located atop the insulator layer,and the at least one tapered semiconductor nanowire comprises a firstsemiconductor nanowire portion having a first width, a secondsemiconductor nanowire portion having a second width and a thirdsemiconductor nanowire portion having a third width, wherein the thirdsemiconductor nanowire portion is located between the first and secondsemiconductor nanowire portions, and wherein the first width is lessthan the third width, and the third width is less than the second width.Next, a gate is formed atop the third semiconductor nanowire portion ofthe at least one tapered semiconductor nanowire. After gate formation,the first semiconductor nanowire portion is located on a first side ofthe gate and the second semiconductor nanowire portion is located on asecond side of the gate that is opposite to the first side. Next, asource region is formed on the first side of the gate and a drain regionis formed of the second side of the gate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view depicting a semiconductor-on-insulator(SOI) substrate that can be employed in one embodiment of the presentdisclosure.

FIG. 2 is a perspective view of the SOI substrate shown in FIG. 1 afterpatterning an SOI layer of the semiconductor-on-insulator substrate toprovide at least one semiconductor nanowire that has an end segmentconnected to a first SOI pad region and another end segment connected toa second SOI pad region.

FIG. 3A is a perspective view of the structure of FIG. 2 after formingat least one tapered semiconductor nanowire from the at least onesemiconductor nanowire, wherein the at least one tapered semiconductornanowire includes a first semiconductor nanowire portion having a firstwidth, a second semiconductor nanowire portion having a second width anda third semiconductor nanowire portion having a third width, wherein thethird semiconductor nanowire portion is located between the first andsecond semiconductor nanowire portions, and wherein the first width isless than the third width, and the third width is less than the secondwidth.

FIG. 3B is a top down view of the structure shown in FIG. 3A.

FIG. 4 is a perspective view of the structure of FIG. 3A after gateformation atop the third semiconductor nanowire portion, wherein aftergate formation the first semiconductor nanowire portion is located on afirst side of the gate and the second semiconductor nanowire is locatedon a second side of the gate.

FIG. 5 is a cross sectional view of the gate along the line A-A shown inFIG. 4.

FIG. 6 is a perspective view of the structure of FIG. 4 after spacerformation.

FIG. 7 is a perspective view of the structure of FIG. 6 after formationof a source region and a drain region.

FIG. 8 is a perspective view of the structure of FIG. 7 after formationof a metal semiconductor alloy layer atop the source region and thedrain region.

FIG. 9 is a top down view illustrating at least one taperedsemiconductor nanowire that has a portion located on a drain side of thegate that is wider relative to another portion of the at least onetapered semiconductor nanowire that is located on the source side of thegate.

FIG. 10 is a perspective view of the structure of FIG. 2 aftersuspending the at least one semiconductor nanowire.

FIG. 11A is a perspective view of the structure of FIG. 10 after formingat least one tapered semiconductor nanowire from the at least onesemiconductor nanowire, wherein the at least one tapered semiconductornanowire includes a first semiconductor nanowire portion having a firstwidth, a second semiconductor nanowire portion having a second width anda third semiconductor nanowire portion having a third width, wherein thethird semiconductor nanowire portion is located between the first andsecond semiconductor nanowire portions, and wherein the first width isless than the third width, and the third width is less than the secondwidth.

FIG. 11B is a top-down view of the structure shown in FIG. 11A.

FIG. 12 is a perspective view of the structure of FIG. 11A after gateformation atop the third semiconductor nanowire portion, wherein aftergate formation the first semiconductor nanowire portion is located on afirst side of the gate and the second semiconductor nanowire is locatedon a second side of the gate.

FIG. 13 is a cross sectional view of the gate along the line A-A shownin FIG. 12.

FIG. 14 is a perspective view of the structure of FIG. 13 after spacerformation.

FIG. 15 is a perspective view of the structure of FIG. 14 afterformation of the source region and the drain region.

FIG. 16 is a perspective view of the structure of FIG. 16 afterformation of a metal semiconductor alloy layer atop the source regionand the drain region.

DETAILED DESCRIPTION

The present disclosure will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent disclosure. It is noted that the drawings of the presentdisclosure are provided for illustrative purposes only and, as such, thedrawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present disclosure. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present disclosure may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present disclosure.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present.

As stated above, the present disclosure provides non-planarsemiconductor devices having reduced gate to drain coupling and thusreduced gate induced drain tunneling currents. The reduction in gate todrain coupling and gate induced drain tunneling currents is achieved inthe present disclosure by providing at least one semiconductor nanowirehaving a tapered profile which widens from the source side of the devicetowards the drain side of the device. The term “non-planar” as used todescribe a semiconductor device denotes devices formed in regions otherthan the top layer of the substrate.

In particular, the present disclosure provides semiconductor nanowirechannel field effect transistors (FETs) that include at least onetapered semiconductor nanowire having a first semiconductor nanowireportion whose width is less than a second semiconductor nanowireportion, and a gate that fully or partially surrounds a thirdsemiconductor nanowire portion of the tapered semiconductor nanowirewhich is located between the first and second semiconductor nanowireportions. Applicants have found that by having a tapered semiconductornanowire in which the width of the semiconductor nanowire portion on thedrain side of the gate is larger than the width of the semiconductornanowire portion on the source side of the gate, a semiconductor deviceis provided that has reduced gate to drain coupling and thus reducedgate induced drain tunneling currents.

The channel of the semiconductor nanowire channel field effecttransistors (FETs) of the present disclosure forms at the surface of aportion of the at least one semiconductor nanowire that is under thegate (or in the bulk of the nanowire when the nanowire has a diametersmaller than 5 nm). When the gate fully surrounds the at least onesemiconductor nanowire, the non-planar semiconductor device can bereferred to as a gate-all-around FET. When the gate partially surroundsthe at least one semiconductor nanowire, as in the case when the atleast one nanowire has a bottommost surface that is still attached to anunderlying insulator layer, the non-planar semiconductor device can bereferred to as an omega-gate FET. Although the description that followsillustrates the formation of only one type of non-planar semiconductordevice (i.e., gate-all-around FET or omega-gate FET) on the surface of asubstrate, the present disclosure also contemplates forming both typesof devices on the surface of the same substrate. When both types ofnon-planar semiconductor devices are formed on a same substrate, blockmask technology can be used to prevent the undercutting of thesemiconductor nanowires in specific regions of the substrate.

Referring first to FIG. 1, there is illustrated asemiconductor-on-insulator (SOI) substrate 10 that can be employed inone embodiment of the present disclosure. The SOI substrate 10 includesa handle substrate 12, an insulator layer 14 and asemiconductor-on-insulator (SOI) layer 16.

The handle substrate 12 of the SOI substrate 10 includes a firstsemiconductor material which can be selected from, but is not limitedto, silicon, germanium, silicon-germanium alloy, silicon carbon alloy,silicon-germanium-carbon alloy, gallium arsenide, indium arsenide,indium phosphide, III-V compound semiconductor materials, II-VI compoundsemiconductor materials, organic semiconductor materials, and othercompound semiconductor materials. In some embodiments of the presentdisclosure, the material of the handle substrate 12 can be a singlecrystalline, i.e., epitaxial, semiconductor material. The term “singlecrystalline” as used throughout the present disclosure denotes amaterial in which the crystal lattice of the entire sample is continuousand unbroken to the edges of the sample, with no grain boundaries. Inone example, the handle substrate 12 can be a single crystalline siliconmaterial.

All or portions of the handle substrate 12 can be doped to provide atleast one globally or locally conductive region (not shown) locatedbeneath the interface between the handle substrate 12 and the insulatorlayer 14. The dopant concentration in doped regions of the handlesubstrate 12 can be optimized for device performance. The thickness ofthe handle substrate 12 can be from 50 microns to 1 mm, although lesserand greater thicknesses can also be employed.

The insulator layer 14 of the SOI substrate 10, which is sandwichedbetween the handle substrate 12 and the SOI layer 16, may be referred toa buried insulator layer. The insulator layer 14 can be a semiconductoroxide, a semiconductor nitride, a semiconductor oxynitride, or anymultilayered stack thereof. In some embodiments, the insulator layer 14is a silicon oxide layer. In one embodiment, the insulator layer 14 ofthe SOI substrate 10 can have a thickness from 10 nm 30 to nm. Inanother embodiment, the insulator layer 14 of the SOI substrate 10 canhave a thickness from 2 nm to 50 nm.

The SOI layer 16 of the SOI substrate 10 includes a second semiconductormaterial which can be selected from, but is not limited to, silicon,germanium, silicon-germanium alloy, silicon carbon alloy,silicon-germanium-carbon alloy, gallium arsenide, indium arsenide,indium phosphide, III-V compound semiconductor materials, II-VI compoundsemiconductor materials, organic semiconductor materials, and othercompound semiconductor materials. In some embodiments of the presentdisclosure, the second semiconductor material of the SOI layer 16 can bea single crystalline, i.e., epitaxial, semiconductor material. In oneexample, the second semiconductor material of the SOI layer 16 can be asingle crystalline silicon material. In one embodiment, the secondsemiconductor material of the SOI layer 16 may be comprised of a samesemiconductor material as that of the handle substrate 12. In anotherembodiment, the second semiconductor material of the SOI layer 16 may becomprised of a different semiconductor material as that of the handlesubstrate 12. In one embodiment, the thickness of the SOI layer 16 canbe from 40 nm to 200 nm. In another embodiment, the thickness of the SOIlayer 16 can be from 4 nm to 5000 nm.

In some embodiments in which the SOI layer 16 has a thickness that isoutside one of the aforementioned ranges, the SOI layer 16 can bethinned to a desired thickness within one of the above mentioned rangesby planarization, grinding, wet etching, dry etching, oxidation followedby oxide etching, or any combination thereof. One method of thinning anSOI layer 16 is to oxidize the semiconductor material, such as silicon,by a thermal dry or wet oxidation process, and then wet etching thesemiconductor oxide layer, such as silicon oxide, using a hydrofluoric(HF) acid mixture. This process can be repeated to achieve the desiredthickness of the SOI layer 16.

In some embodiments of the present disclosure, the SOI substrate 10 canbe formed by implanting a high-energy dopant such as, for example,oxygen into a bulk semiconductor substrate and then annealing thestructure to form the insulator layer 14 of the SOI substrate 10. Inanother embodiment, the insulator layer 14 may be deposited or grown bythermal techniques prior to the formation of the SOI layer 16. In yetanother embodiment, the SOI substrate 10 can be formed using awafer-bonding technique. Examples of some known processes forfabricating an SOI substrate which can be employed in the presentdisclosure include Separation by Implanted OXygen (SIMOX) or waferbonding using SmartCut™.

Referring now to FIG. 2, there is illustrated the SOI substrate 10 shownin FIG. 1 after forming at least one semiconductor nanowire 18 that hasan end segment 18A that is connected to a first SOI pad region 20A andanother end segment 18B that is connected to a second SOI pad region20B. The at least one semiconductor nanowire 18, the first pad region20A and the second SOI pad region 20B are comprised of the same secondsemiconductor material as SOI layer 16. As shown, the at least onesemiconductor nanowire 18 is orientated perpendicular relative to theorientation of the first and second SOI pad regions 20A, 20B.

The structure shown in FIG. 2 can be formed by patterning the SOI layer16 utilizing lithography, followed by an etch process such as, forexample, reactive ion etching (RIE). The lithographic step can includeforming a photoresist (not shown) atop the SOI layer 16, exposing thephotoresist to a desired pattern of radiation and then developing theexposed photoresist utilizing a conventional resist developer. The etchprocess that is employed in the present disclosure is selective so itpreferentially removes exposed portions of the SOI layer 16 but not theunderlying insulator layer 14. In some embodiments, a reactive ion etchutilizing hydrogen bromide (HBr) can be employed. Typically, a slabcomprising a portion of the SOI layer is first formed (by lithographyand etching) and a second sequence of lithography and etching is used topattern the slab into the structure shown in FIG. 2 which includes atleast one semiconductor nanowire 18 and the first and second SOI padregions 20A, 20B.

Referring now to FIGS. 3A and FIG. 3B, there are illustrated thestructure of FIG. 2 after at least one tapered semiconductor nanowire 24is formed from the at least one semiconductor nanowire 18. The at leastone tapered semiconductor nanowire 24 that is formed has a width thatcontinuously increases/decreases from one end segment to another endsegment. The at least one tapered semiconductor nanowire 24 includes afirst semiconductor nanowire portion 24A having a first width w₁, asecond semiconductor nanowire 24B portion having a second width w₂ and athird nanowire semiconductor portion 24C having a third width w₃. In thedrawings, dotted lines are provided to highlight the various portions ofthe at least one tapered semiconductor nanowire 24.

As is shown, the third semiconductor nanowire portion 24C is locatedbetween and is in direct contact with the first semiconductor nanowireportion 24A and the second semiconductor nanowire portion 24B. Also, andas shown in FIG. 3B, the first width w₁ is less than the third width w₃,and the third width w₃ is less than the second width w₂. As such, the atleast one tapered semiconductor nanowire 24 that is formed has a widthat one portion, which is nearest to the secondsemiconductor-on-insulator pad region 20B, that is greater than thewidth of the other end of the at least one tapered semiconductornanowire 24, which is nearest to the first semiconductor-on-insulatorpad region 20A.

In one embodiment, the first width w₁ of the first semiconductornanowire portion 24A has a width from 5 nm to 10 nm, the third width w₃of the third semiconductor nanowire portion 24C has a width from 7 nm to15 nm, the second width w₂ of the second semiconductor nanowire portion24B has a width from 10 nm to 20 nm. In another embodiment, the firstwidth w₁ of the first semiconductor nanowire portion 24A has a widthfrom 3 nm to 30 nm, the third width w₃ of the third semiconductornanowire portion 24C has a width from 5 nm to 45 nm, the second width w₂of the second semiconductor nanowire portion 24B has a width from 20 nmto 50 nm. Other widths that are greater than or lesser than the rangesprovided above can also be employed so long as the semiconductornanowire that is formed has a tapered profile as defined above.

In one embodiment, the forming of the at least one tapered semiconductornanowire 24 from the at least one semiconductor nanowire 18 comprisesselective removal of semiconductor material from a portion of the atleast one semiconductor nanowire 18 that is located nearest to the firstsemiconductor-on-insulator pad region 20A relative to at least anotherportion of the at least one semiconductor nanowire 18 that is locatednearest the second semiconductor-on-insulator pad region 20B, andannealing. The selective removal can be performed by subjecting apreselected portion of the at least one semiconductor nanowire 18 to ahigh temperature (greater than 700° C.) oxidation followed by etching ofthe grown oxide. The oxidation and etching can be repeated on thepreselected portion of the at least one semiconductor nanowire toprovide a desired dimension to the preselected portion of the at leastone semiconductor nanowire 18.

The anneal used in this embodiment of the present disclosure serves tosmooth the at least one tapered semiconductor nanowire 24 providing anelliptical shape or a cylindrical shape to the tapered semiconductornanowire 24. This anneal can be performed in hydrogen. In oneembodiment, the anneal employed in the present disclosure can beperformed in hydrogen at a temperature from 600° C. to 1000° C. Thepressure of hydrogen used during the anneal can range from 7 torr to 600torr.

In another embodiment, the forming of the at least one taperedsemiconductor nanowire 24 from the at least one semiconductor nanowire18 comprises forming a mask on a portion of the at least onesemiconductor nanowire 18 that is located nearest the secondsemiconductor-on-insulator pad region 20B, annealing and removing themask. The mask, which is not shown in the drawings, can be comprised ofa hard mask material such as an oxide, nitride and/or oxynitride. When ahard mask is employed, the hard mask can be formed by deposition or athermally process, followed by lithography and etching. The etch used inthis point of the present disclosure selectively removes exposedportions of the hard mask material. With the hard mask in place, theexposed portion of the at least one semiconductor nanowire 18 that isnearest the first SOI pad region 20A is annealed in hydrogen. Theannealing serves to smooth the semiconductor nanowire by removingsemiconductor material from an outer surface thereof providing asemiconductor portion, i.e., the first semiconductor portion 24A, whosewidth is less than the width of remaining portions of the at least onesemiconductor nanowire 18 that were protected by the mask. In oneembodiment, the anneal employed in the present disclosure can beperformed in hydrogen at a temperature from 600° C. to 1000° C. Thepressure of hydrogen used during the anneal can range from 7 torr to 600torr. Following the anneal, the mask is removed utilizing a conventionalstripping process and a resultant semiconductor nanowire which istapered is formed.

In a further embodiment, the initial patterning step, particularly thelithographic step, used in defining the at least one semiconductornanowire can induce a strain in the SOI material that results incurvature of the at least one semiconductor nanowire. In thisembodiment, the strain that is induced by the initial patterning stepcan directly form a tapered semiconductor nanowire 24 as definedhereinabove without having to first form a non-tapered semiconductornanowire. In some embodiments, the tapered semiconductor nanowires 24that are formed from the initial patterning step can be annealed tosmooth the at least one tapered semiconductor nanowire 24 providing anelliptical shape or a cylindrical shape to the tapered semiconductornanowire 24. When such an anneal is performed, the anneal is typicallypreformed in hydrogen. In one embodiment, the anneal employed in thepresent disclosure can be performed in hydrogen at a temperature from600° C. to 1000° C. The pressure of hydrogen used during the anneal canrange from 7 torr to 600 torr.

In one embodiment, the initial patterning step using optical lithographycan be used to directly form a tapered semiconductor nanowire. Inanother embodiment, the initial patterning step that can be used todirectly form a tapered semiconductor nanowire comprises electron beam(E-beam) lithography. In E-beam lithography, individual spots (pixels)are defined in the resist. This would enable forming a tapered wirestructure as more pixels can be written towards the drain side of thedevice, and in subsequent anneal processes, this would smooth out to atapered wire structure.

FIG. 4 is a perspective view of the structure of FIG. 3A after gateformation atop the third semiconductor nanowire portion 24C. After gateformation, the first semiconductor nanowire portion 24A is located on afirst side of the gate and the second semiconductor nanowire 24B whichis wider than the first semiconductor nanowire portion 24A is located ona second side of the gate.

Specifically, FIG. 4 illustrates a gate 26 that is formed on the thirdsemiconductor nanowire portion 24C of each tapered semiconductornanowire 24. The structure shown in FIG. 4 also includes a polysiliconline 34 that caps each of the gates 26 and a hard mask line 36 that islocated atop the polysilicon line 34. Although a single gate 26 is shownon each tapered semiconductor nanowire 24, a plurality of gates 26 canbe formed on each tapered semiconductor nanowire 24.

The structure shown in FIG. 4 is formed by first depositing blanketlayers of the various material layers of gate 26 (to be described ingreater detail herein below) on the entire structure shown in FIG. 3.Then, a blanket layer of polysilicon is formed atop the various layersof the gate 26, and thereafter a blanket layer of hard mask material isformed on the entire surface of the blanket layer of polysilicon. Theentire material stack including the materials layers of the gate 26, theblanket layer of polysilicon, and blanket layer of hard mask material,is then patterned by lithography and etching providing the structureshown in FIG. 4. The etch used in forming the structure shown in FIG. 4may comprise a dry etching process such as, for example, reactive ionetching, plasma etching, or ion beam etching.

Each gate 26, as shown, for example, in FIG. 5, may comprise a firstdielectric material 28, an optional second dielectric material 30, and ametal gate film 32. It is noted that the third semiconductor nanowireportion 24C of the tapered semiconductor nanowire 24 that is directlybeneath the gate 26 serves as a channel of the semiconductor nanowireFET of the present disclosure. The first dielectric material 28 maycomprise a semiconductor oxide, semiconductor nitride, semiconductoroxynitride, or a high k material having a dielectric constant greaterthan silicon oxide. Exemplary high k dielectrics include, but are notlimited to, HfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃,HfO_(x)N_(y), ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y),SrTiO_(x)N_(y), LaAlO_(x)N_(y), Y₂O_(x)N_(y), SiON, SiN_(x), a silicatethereof, and an alloy thereof. Each value of x is independently from 0.5to 3 and each value of y is independently from 0 to 2.

The first dielectric material 28 can be formed by any conventionaltechnique including, for example, deposition or thermal growth, which iswell known to those skilled in the art. In one embodiment of the presentdisclosure, the first dielectric material 28 has a thickness in a rangefrom 1 nm to 10 nm.

The optional second dielectric material 30 may comprise one of thedielectric materials mentioned above for the first dielectric material28. In one embodiment, the optional second dielectric material 30 iscomprised of a same dielectric material as the first dielectric material28. In another embodiment, the optional second dielectric material 30 iscomprised of a different dielectric material as the first dielectricmaterial 28. For example, and in this embodiment, the first dielectricmaterial 28 may comprise silicon oxide, while the optional seconddielectric material 30 may comprise a high k gate dielectric such as,for example, HfO₂. The optional second dielectric material 30 can beformed utilizing one of the techniques mentioned above in forming thefirst dielectric material 28. In one embodiment, the thickness of theoptional second dielectric 30 may be in a range from 1 nm to 3 nm.

The metal gate film 32 that is formed may comprise an elemental metal(e.g., tungsten, titanium, tantalum, aluminum, nickel, ruthenium,palladium and platinum), an alloy of at least one elemental metal, anelemental metal nitride (e.g., tungsten nitride, aluminum nitride, andtitanium nitride), an elemental metal silicide (e.g., tungsten silicide,nickel silicide, and titanium silicide) and multilayered combinationsthereof. The metal gate film 32 can be formed utilizing a conventionaldeposition process including, for example, chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapordeposition (PVD), sputtering, atomic layer deposition (ALD) and otherlike deposition processes. When a metal silicide is formed, aconventional silicidation process is employed. In one embodiment, themetal gate film 32 has a thickness from 1 nm to 100 nm.

As stated above, a blanket layer of polysilicon is then formed atop themetal gate film 32 utilizing techniques well known in the art. Theblanket layer of polysilicon which is subsequently patterned intopolysilicon line 34 can be doped within an appropriate impurity byutilizing either an in-situ doping deposition process or by utilizingdeposition, followed by a step such as ion implantation or gas phasedoping in which the appropriate impurity is introduced into the blanketlayer of polysilicon.

After forming the blanket layer of polysilicon, a blanket layer of ahard mask material is formed atop the blanket layer of polysilicon. Thehard mask material may comprise a semiconductor oxide, a semiconductornitride, a semiconductor oxynitride or any multilayered stack thereofcan be used. In one embodiment, the hard mask material employed issilicon nitride. The blanket layer of hard mask material can be formedutilizing any conventional deposition process or thermal growth processthat is well known to those skilled in the art.

After formation of the gate 26 atop the third semiconductor nanowireportion 24C, the first semiconductor portion 24A is located on a firstside of the gate, while the second semiconductor portion 24B is formedon a second side of the gate that is opposite the first side. Inaccordance with the present disclosure, a drain region will besubsequently formed on the second side of the gate, while a sourceregion will be subsequently formed on the first side of the gate.

Referring now to FIG. 6, there is illustrated the structure of FIG. 4after spacer 38 formation. As is shown, the spacer 38 is formed onopposing sides of the polysilicon line 34 and on portions of eachtapered semiconductor nanowire 24 that are not covered by the gate. Thespacer 38 can be formed by depositing a blanket dielectric film such assilicon nitride and then etching the dielectric film from all horizontalsurfaces. In one embodiment, a reactive ion etch can be used in formingthe spacer 38.

Referring now to FIG. 7, there is illustrated the structure of FIG. 6after formation of a source region on the first side of the gateincluding the first SOI pad region 20A and remaining first semiconductornanowire portion 24A and a drain region on the second side of the gateincluding the SOT pad region 20B and remaining second semiconductornanowire portion 24B.

The source and drain regions are formed by a selective epitaxial growthprocess that thickens the exposed nanowire surfaces forming a firstthickened semiconductor nanowire portion 24A′ and a second thickenedsemiconductor nanowire portion 24B′ which are not covered by the gateand spacers. The epitaxial growth also thickens the SOT pad regions 20A,20B. In some embodiments, the hard mask line 36 is removed from thepolysilicon line 34 prior to selective epitaxial growth utilizing aconventional stripping process. In such an embodiment and as shown inFIG. 7, an epitaxial semiconductor layer 40″ forms atop the polysiliconline 34.

In the drawing, reference numeral 40 denotes the epitaxial semiconductorlayer that is formed atop the first pad region 20A, while numeral 40′denotes the epitaxial semiconductor layer that is formed atop the firstpad region 20B. In accordance with the present disclosure the sourceregion includes epitaxial semiconductor layer 40 as well as the firstthickened semiconductor nanowire portion 24A′, while the drain regionincludes epitaxial semiconductor layer 40′ as well as the secondthickened semiconductor nanowire portion 24B′.

The epitaxial growth may merge the adjacent semiconductor portionstogether. In one embodiment, the thickened/merged nanowire portions24A′, 24B′and SOI pad regions 20A, 20B are formed by epitaxiallygrowing, for example, in-situ doped silicon (Si) or a silicon germanium(SiGe) that may be either n-type or p-type doped. The in-situ doped epiprocess forms the source region and the drain region of the nanowireFET. As an example, a chemical vapor deposition (CVD) reactor may beused to perform the epitaxial growth. Precursors for silicon epitaxyinclude SiCl₄, SiH₄ combined with HCl. The use of chlorine allowsselective deposition of silicon only on exposed silicon surfaces. Aprecursor for SiGe may be GeH₄, which may obtain deposition selectivitywithout HCl. Precursors for dopants may include PH₃ or AsH₃ for n-typedoping and B₂H₆ for p-type doping. Deposition temperatures may rangefrom 550° C. to 1000° C. for pure silicon deposition, and as low as 300°C. for pure Ge deposition.

Referring now to FIG. 8, there is illustrated the structure of FIG. 7after formation of a metal semiconductor alloy layer atop the sourceregion and the drain region. The metal semiconductor alloy layer can beformed by first depositing a metal semiconductor alloy forming metalsuch as for example, Ni, Pt, Co, and alloys such as NiPt, on the surfaceof the epitaxial grown semiconductor layer including layers 40, 40′,40″, 24A′ and 24B′. An anneal is then performed that causes reactionbetween the metal semiconductor alloy forming metal and the epitaxialsemiconductor layer. After annealing, any unreactive metal can beremoved. When Ni is used the NiSi phase is formed due to its lowresistivity. For example, formation temperatures include 400° C-600° C.In the drawing, reference numerals 42 and 42′ denote a metalsemiconductor alloy that is formed atop the first and second SOI pads20A and 20B, respectively, reference numeral 24A″ denotes the metalsemiconductor alloy that is formed on the first thickened semiconductornanowire portion 24A′, and reference numeral 24B″ denotes the metalsemiconductor alloy that is formed on the second thickened semiconductornanowire portion 24B′. In embodiments in which the hard mask line 36 wasremoved, a metal semiconductor alloy layer 42″ can form atop thepolysilicon line 34, as is shown in FIG. 7.

Once the metal semiconductor alloy layer is formed, capping layers andvias for connectivity (not shown) may be formed.

Referring now to FIG. 9, there is illustrated a top down view of thebasic concept of the present disclosure including at least one taperedsemiconductor nanowire that has a portion 24B located on a drain side ofthe gate that is wider relative to another portion of the at least onesemiconductor nanowire 24A that is located on the source side of thegate.

Reference is now made to FIGS. 10-16 which illustrate another embodimentof the present disclosure. This another embodiment of the presentdisclosure is similar to the embodiment described above and illustratedin FIGS. 1-9 except that the tapered semiconductor nanowires aresuspended.

This embodiment of the present disclosure begins by providing an SOIsubstrate 10 as shown in FIG. 1 and then patterning the SOI substrate toprovide the structure illustrated in FIG. 2. After forming the structureshown in FIG. 2, the insulator layer 14 located beneath each of the atleast one semiconductor nanowires 18 and portions of the first and SOIpad regions 20A, 20B are removed providing the structure shown in FIG.10. In FIG. 10, reference numeral 100 denotes an undercut that is formedbeneath each of the first and second SOI pad regions 20A, 20B. Theportion of the insulator layer 14 located beneath each of the at leastone semiconductor nanowires 18 and portions of the first and SOI padregions 20A, 20B can be removed utilizing an isotropic etching process.In one embodiment of the present disclosure, the isotropic etching maybe, for example, performed using a diluted hydrofluoric acid (DHF). Inone embodiment, a 100:1 DHF etches approximately 2 to 3 nm of a buriedoxide layer per minute at room temperature.

As shown in FIG. 10, the insulator layer 14 is recessed in regions notcovered by the SOI pad regions 20A, 20B. The isotropic etching resultsin the lateral etching of portions of the insulator layer 14 that areunder the SOI pad regions 20A, 20B. The lateral etch thus suspends theat least one semiconductor nanowire 18 above the remaining portion ofthe insulator layer 14.

Referring now to FIGS. 11A-11B, there are illustrated the structureshown in FIG. 10 after converting each of the semiconductor nanowires 18into a tapered semiconductor nanowire 24. Each tapered semiconductornanowire 24 includes a first semiconductor nanowire portion 24A having afirst width, a second semiconductor nanowire portion 24B having a secondwidth and a third semiconductor nanowire portion 24C having a thirdwidth, wherein the third semiconductor nanowire portion 24C is locatedbetween the first and second semiconductor nanowire portions 24A, 24B,and wherein the first width is less than the third width, and the thirdwidth is less than the second width.

The tapered semiconductor nanowires 24 can be formed utilizing one ofthe techniques mentioned above in forming the tapered semiconductornanowires 24 of the previously discussed embodiment of the presentdisclosure. In the case in which the initial patterning step providestapered semiconductor nanowires, the above mentioned isotropic etch isperformed directly to such a structure suspending the taperedsemiconductor nanowires.

Referring now to FIG. 12, there is illustrated the structure shown inFIG. 11A after formation of gate 26, polysilicon line 34 and hard mask36. After gate formation, the first semiconductor nanowire portion 24Ais located on a first side of the gate 26 and the second semiconductornanowire 24B is located on a second side of the gate 26. The structureshown in FIG. 12 is formed utilizing the same basic processing steps asused in describing the formation of the structure shown in FIG. 4 exceptthat the gate 26 wraps fully around the third semiconductor portion 24Cof the tapered semiconductor nanowire. This is clearly shown in FIG. 13.

Referring now to FIG. 14, there is shown the structure of FIG. 13 afterspacer 38 formation. The spacer 28 is formed as described above inconnection with FIG. 6. In this embodiment, however, a spacer portion 38s forms in the undercut regions 100.

Referring now to FIG. 15, there is illustrated the structure of FIG. 14after formation of the source region and the drain region. The sourceand drain regions are formed via epitaxy as described above inconnection with the structure shown in FIG. 7 of the present disclosure.

Referring now to FIG. 16, there is illustrated the structure of FIG. 15after formation of a metal semiconductor alloy layer atop the sourceregion and the drain region. The metal semiconductor alloy layer isformed as described above in connection with the structure shown in FIG.8 of the present disclosure.

While the present disclosure has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present disclosure. It is therefore intended that the presentdisclosure not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A non-planar semiconductor device comprising: atleast one tapered semiconductor nanowire located atop an insulator layerof a semiconductor-on-insulator substrate, wherein an end segment ofsaid at least one tapered semiconductor nanowire is attached to a firstsemiconductor-on-insulator pad region and another end segment of said atleast one tapered semiconductor nanowire is attached to a secondsemiconductor-on-insulator pad region, said pad regions are both locatedatop said insulator layer; a gate located on a portion of said at leastone tapered semiconductor nanowire; a source region located on a firstside of the gate; and a drain region located on a second side of thegate which is opposite said first side of the gate, wherein said atleast one tapered semiconductor nanowire comprises a first semiconductornanowire portion having a first width located on the first side of thegate and a second semiconductor nanowire portion having a second widththat is located on the second side of the gate, wherein said secondwidth is greater than the first width.
 2. The non-planar semiconductordevice of claim 1, wherein said at least one tapered semiconductornanowire has a bottommost surface that is in direct contact with saidinsulator layer of said semiconductor-on-insulator substrate.
 3. Thenon-planar semiconductor device of claim 1, wherein said at least onetapered semiconductor nanowire is suspended above said insulator layerof said semiconductor-on-insulator substrate and wherein a portion ofsaid first and second semiconductor-on-insulator pads are suspendedabove said insulator layer.
 4. The non-planar semiconductor device ofclaim 1, wherein said portion of said at least one tapered semiconductornanowire that is beneath the gate is a third semiconductor nanowireportion of the at least one tapered semiconductor nanowire that ispositioned between and in direct contact with both the first and secondsemiconductor nanowire portions.
 5. The non-planar semiconductor deviceof claim 4, wherein said third semiconductor nanowire portion has athird width that is greater than the first width, yet smaller than thesecond width.
 6. The non-planar semiconductor device of claim 4, whereinsaid third semiconductor nanowire portion of said at least one taperedsemiconductor nanowire forms a channel of said non-planar semiconductordevice.
 7. The non-planar semiconductor device of claim 1, furthercomprising a spacer located on each side of the gate.
 8. The non-planarsemiconductor device of claim 1, wherein said source region and saiddrain region comprise an epitaxially semiconductor material located atopsaid first and second semiconductor-on-insulator pad regions, andexposed surfaces of the first semiconductor nanowire portion and thesecond semiconductor nanowire portion.
 9. The non-planar semiconductordevice of claim 1, wherein a metal semiconductor alloy material islocated atop said source region and said drain region.
 10. Thenon-planar semiconductor device of claim 1, wherein said gate comprisesa gate stack including at least one gate dielectric material and a metalgate film located atop the at least one gate dielectric material.
 11. Amethod of forming a non-planar semiconductor device comprising: formingat least one semiconductor nanowire above an insulator layer of asemiconductor-on-insulator substrate, wherein an end segment of said atleast one semiconductor nanowire is attached to a firstsemiconductor-on-insulator pad region and another end segment of said atleast one semiconductor nanowire is attached to a secondsemiconductor-on-insulator pad region, said pad regions are both locatedatop said insulator layer; forming at least one semiconductor nanowireinto at least one tapered semiconductor nanowire comprising a firstsemiconductor nanowire portion having a first width, a secondsemiconductor nanowire portion having a second width and a thirdsemiconductor nanowire portion having a third width, wherein said thirdsemiconductor nanowire portion is located between the first and secondsemiconductor nanowire portions, and said first width is less than thethird width, and wherein said third width is less than the second width;forming a gate atop said third semiconductor nanowire portion of said atleast one semiconductor nanowire, wherein said first semiconductornanowire portion is located on a first side of the gate and said secondsemiconductor nanowire portion is located on a second side of the gatethat is opposite to said first side; and forming a source region on saidfirst side of the gate and forming a drain region of the second side ofthe gate.
 12. The method of claim 11, wherein said forming the at leastone tapered semiconductor nanowire comprises selective removal ofsemiconductor material from a portion of said at least one semiconductornanowire that is located nearest to the first semiconductor-on-insulatorpad region relative to at least another portion of the at least onesemiconductor nanowire that is located nearest the secondsemiconductor-on-insulator pad region, and annealing.
 13. The method ofclaim 11, wherein said forming the at least one tapered semiconductornanowire comprises forming a mask on a portion of the at least onesemiconductor nanowire that is located nearest the secondsemiconductor-on-insulator pad region, annealing and removing said mask.14. The method of claim 11, further comprising forming a spacer on bothsides of the gate.
 15. The method of claim 11, wherein said forming thesource region and forming the drain region comprises forming an in-situdoped epitaxial semiconductor material atop the first andsemiconductor-on-insulator pad regions and atop exposed surfaces of thefirst semiconductor nanowire portion and the second semiconductornanowire portion.
 16. The method of claim 11, further comprising forminga metal semiconductor alloy material atop the source region and thedrain region.
 17. The method of claim 11, wherein said forming the gatecomprises forming at least one gate dielectric material, followed byforming at least a metal gate film atop the at least one gate dielectricmaterial.
 18. A method of forming a non-planar semiconductor devicecomprising: forming at least one tapered semiconductor nanowire above aninsulator layer of a semiconductor-on-insulator substrate, wherein anend segment of said at least one tapered semiconductor nanowire isattached to a first semiconductor-on-insulator pad region and anotherend segment of said at least one tapered semiconductor nanowire isattached to a second semiconductor-on-insulator pad region, said padregions are both located atop said insulator layer, and wherein said atleast one tapered semiconductor nanowire comprises a first semiconductornanowire portion having a first width, a second semiconductor nanowireportion having a second width and a third semiconductor nanowire portionhaving a third width, wherein said third semiconductor nanowire portionis located between the first and second semiconductor nanowire portions,and wherein said first width is less than the third width, and saidthird width is less than the second width; forming a gate atop saidthird semiconductor nanowire portion of said at least one taperedsemiconductor nanowire, wherein said first semiconductor nanowireportion is located on a first side of the gate and said secondsemiconductor nanowire portion is located on a second side of the gatethat is opposite to said first side; and forming a source region on saidfirst side of the gate and forming a drain region of the second side ofthe gate.
 19. The method of claim 18 wherein said forming the at leastone semiconductor nanowire comprises lithography wherein a strain isinduced in said at least one semiconductor nanowire that results incurvature of said at least one semiconductor nanowire, wherein saidstrain forms said first semiconductor nanowire portion, said secondsemiconductor nanowire portion and said third semiconductor nanowireportion of said at least one semiconductor nanowire, and saidlithography is optical lithography or E-beam lithography.
 20. The methodof claim 19 wherein said forming the at least one semiconductor nanowirefurther comprises annealing.